Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- RS-stocknr.:
- 210-4999
- Fabrikantnummer:
- SIR178DP-T1-RE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,19
(excl. BTW)
€ 13,54
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,238 | € 11,19 |
| 50 - 120 | € 2,014 | € 10,07 |
| 125 - 245 | € 1,61 | € 8,05 |
| 250 - 495 | € 1,32 | € 6,60 |
| 500 + | € 1,186 | € 5,93 |
*prijsindicatie
- RS-stocknr.:
- 210-4999
- Fabrikantnummer:
- SIR178DP-T1-RE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 430A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.31mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 430A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.31mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Leadership RDS(ON) minimizes power loss from conduction
2.5 V ratings and operation at low voltage gate drive
100 % Rg and UIS tested
Gerelateerde Links
- Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8
- Vishay SiR692DP Type N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8 SIR692DP-T1-RE3
- Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 65 A, 100 V Enhancement, 8-Pin SO-8 SIR668DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3
- Vishay SiR870BDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3
- Vishay SiR104LDP Type N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR104LDP-T1-RE3