onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1
- RS-stocknr.:
- 202-5731
- Fabrikantnummer:
- NVBG040N120SC1
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 36,62
(excl. BTW)
€ 44,32
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 652 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 18,31 | € 36,62 |
| 20 - 198 | € 15,785 | € 31,57 |
| 200 + | € 13,68 | € 27,36 |
*prijsindicatie
- RS-stocknr.:
- 202-5731
- Fabrikantnummer:
- NVBG040N120SC1
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 178W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Standards/Approvals | AEC-Q101 | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 178W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 150°C | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Standards/Approvals AEC-Q101 | ||
Length 10.2mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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