Vishay SiSS61DN Type P-Channel MOSFET, 111.9 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS61DN-T1-GE3
- RS-stocknr.:
- 188-4905
- Fabrikantnummer:
- SiSS61DN-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 188-4905
- Fabrikantnummer:
- SiSS61DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 111.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS61DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.8W | |
| Typical Gate Charge Qg @ Vgs | 154nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Height | 780μm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 111.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212 | ||
Series SiSS61DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.8W | ||
Typical Gate Charge Qg @ Vgs 154nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Height 780μm | ||
Length 3.3mm | ||
Automotive Standard No | ||
P-Channel 20 V (D-S) MOSFET.
TrenchFET® Gen III p-channel power MOSFET
Leadership RDS(on) in compact and thermally enhanced package
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