Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212
- RS-stocknr.:
- 165-6922
- Fabrikantnummer:
- SISS23DN-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 957,00
(excl. BTW)
€ 1.158,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,319 | € 957,00 |
*prijsindicatie
- RS-stocknr.:
- 165-6922
- Fabrikantnummer:
- SISS23DN-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3 mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 3.3 mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay TrenchFET Type P-Channel MOSFET, 27 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 127.5 A, 20 V Enhancement, 8-Pin PowerPAK 1212 SiSS63DN-T1-GE3
- Vishay TrenchFET Gen III Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual