Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G
- RS-stocknr.:
- 177-9842
- Fabrikantnummer:
- TN2106K1-G
- Fabrikant:
- Microchip
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,98
(excl. BTW)
€ 10,86
(incl. BTW)
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 + | € 0,449 | € 8,98 |
*prijsindicatie
- RS-stocknr.:
- 177-9842
- Fabrikantnummer:
- TN2106K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TN2106 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TN2106 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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