Microchip TP0610T Type P-Channel MOSFET, 60 V Enhancement, 3-Pin SOT-23 TP0610T-G
- RS-stocknr.:
- 333-219
- Fabrikantnummer:
- TP0610T-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 3000 eenheden)*
€ 2.433,00
(excl. BTW)
€ 2.943,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 02 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,811 | € 2.433,00 |
*prijsindicatie
- RS-stocknr.:
- 333-219
- Fabrikantnummer:
- TP0610T-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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