Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G
- RS-stocknr.:
- 644-261
- Fabrikantnummer:
- 2N7002-G
- Fabrikant:
- Microchip
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 3,43
(excl. BTW)
€ 4,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,343 | € 3,43 |
| 100 - 490 | € 0,302 | € 3,02 |
| 500 - 990 | € 0,271 | € 2,71 |
| 1000 + | € 0,263 | € 2,63 |
*prijsindicatie
- RS-stocknr.:
- 644-261
- Fabrikantnummer:
- 2N7002-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Height | 1.12mm | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.3mm | ||
Height 1.12mm | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- TH
The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Gerelateerde Links
- onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002
- DiodesZetex 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-7-F
- DiodesZetex 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23
- Nexperia 2N7002 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex 2N7002 Type N-Channel MOSFET, 220 mA, 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex 2N7002 Type N-Channel MOSFET, 380 mA, 60 V Enhancement, 3-Pin SOT-23
- Nexperia 2N7002 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002,215