IXYS X2-Class Type N-Channel MOSFET, 120 A, 650 V Enhancement, 3-Pin TO-264

Subtotaal (1 tube van 25 eenheden)*

€ 530,525

(excl. BTW)

€ 641,925

(incl. BTW)

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  • Verzending vanaf 27 april 2026
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Aantal stuks
Per stuk
Per tube*
25 +€ 21,221€ 530,53

*prijsindicatie

RS-stocknr.:
168-4816
Fabrikantnummer:
IXTK120N65X2
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-264

Series

X2-Class

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.25kW

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

230nC

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

20.3mm

Height

5.3mm

Width

26.3 mm

Automotive Standard

No

Land van herkomst:
US

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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