IXYS X2-Class N-Channel MOSFET, 76 A, 650 V Enhancement, 4-Pin SOT-227 IXTN102N65X2

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RS-stocknr.:
917-1454
Artikelnummer Distrelec:
302-53-429
Fabrikantnummer:
IXTN102N65X2
Fabrikant:
IXYS
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Merk

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

76A

Maximum Drain Source Voltage Vds

650V

Series

X2-Class

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

152nC

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

595W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.42mm

Length

38.23mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS X2-Class Series


The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.

Very low RDS(on) and QG (gate charge)

Intrinsic rectifier diode

Low intrinsic gate resistance

Low package inductance

Industry standard packages

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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