IXYS X2-Class Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247 IXTH34N65X2
- RS-stocknr.:
- 917-1463
- Fabrikantnummer:
- IXTH34N65X2
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 15,69
(excl. BTW)
€ 18,984
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 336 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 7,845 | € 15,69 |
| 10 - 28 | € 5,25 | € 10,50 |
| 30 - 88 | € 5,105 | € 10,21 |
| 90 - 178 | € 4,815 | € 9,63 |
| 180 + | € 4,585 | € 9,17 |
*prijsindicatie
- RS-stocknr.:
- 917-1463
- Fabrikantnummer:
- IXTH34N65X2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 96mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 540W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.45 mm | |
| Standards/Approvals | No | |
| Length | 16.24mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-44-490 | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 96mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 540W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 21.45 mm | ||
Standards/Approvals No | ||
Length 16.24mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
Distrelec Product Id 304-44-490 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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