IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD MMIX1T600N04T2
- RS-stocknr.:
- 168-4791
- Fabrikantnummer:
- MMIX1T600N04T2
- Fabrikant:
- IXYS
Subtotaal (1 tube van 20 eenheden)*
€ 441,32
(excl. BTW)
€ 534,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 80 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 20 + | € 22,066 | € 441,32 |
*prijsindicatie
- RS-stocknr.:
- 168-4791
- Fabrikantnummer:
- MMIX1T600N04T2
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | GigaMOS, HiperFET | |
| Package Type | SMPD | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Maximum Power Dissipation Pd | 830W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 590nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 23.25mm | |
| Length | 25.25mm | |
| Standards/Approvals | No | |
| Height | 5.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series GigaMOS, HiperFET | ||
Package Type SMPD | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Maximum Power Dissipation Pd 830W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 590nC | ||
Maximum Operating Temperature 175°C | ||
Width 23.25mm | ||
Length 25.25mm | ||
Standards/Approvals No | ||
Height 5.7mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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