Vishay Isolated TrenchFET 2 N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3
- RS-stocknr.:
- 165-6930
- Fabrikantnummer:
- SI1922EDH-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 165-6930
- Fabrikantnummer:
- SI1922EDH-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 263mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 263mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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