Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- RS-stocknr.:
- 165-6297
- Fabrikantnummer:
- SIA416DJ-T1-GE3
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 165-6297
- Fabrikantnummer:
- SIA416DJ-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-70 | |
| Series | ThunderFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 850mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.15mm | |
| Length | 2.15mm | |
| Height | 750μm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-70 | ||
Series ThunderFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 850mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.15mm | ||
Length 2.15mm | ||
Height 750μm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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