Vishay ThunderFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin SOIC SI4090DY-T1-GE3
- RS-stocknr.:
- 787-9131
- Fabrikantnummer:
- SI4090DY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,08
(excl. BTW)
€ 7,355
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.485 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,216 | € 6,08 |
| 50 - 120 | € 1,19 | € 5,95 |
| 125 - 245 | € 0,898 | € 4,49 |
| 250 - 495 | € 0,742 | € 3,71 |
| 500 + | € 0,584 | € 2,92 |
*prijsindicatie
- RS-stocknr.:
- 787-9131
- Fabrikantnummer:
- SI4090DY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOIC | |
| Series | ThunderFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45.6nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 7.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOIC | ||
Series ThunderFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45.6nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 7.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Gerelateerde Links
- Vishay ThunderFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET, 11.1 A, 100 V Enhancement, 8-Pin SOIC SI4056DY-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET, 11.1 A, 100 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 8-Pin PowerPAK 1212 SIS468DN-T1-GE3
- Vishay ThunderFET Type N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70
- Vishay ThunderFET Type N-Channel MOSFET, 30 A, 80 V Enhancement, 8-Pin PowerPAK 1212
- Vishay ThunderFET Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-220AB SUP70040E-GE3