Infineon Isolated OptiMOS 2 Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1
- RS-stocknr.:
- 145-9487
- Fabrikantnummer:
- 2N7002DWH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 159,00
(excl. BTW)
€ 192,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 15.000 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,053 | € 159,00 |
| 6000 - 12000 | € 0,05 | € 150,00 |
| 15000 + | € 0,048 | € 144,00 |
*prijsindicatie
- RS-stocknr.:
- 145-9487
- Fabrikantnummer:
- 2N7002DWH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.96V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Width | 1.25 mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.96V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Width 1.25 mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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