onsemi Isolated 2 Type N-Channel Power MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-88 NTJD5121NT1G
- RS-stocknr.:
- 780-0627
- Fabrikantnummer:
- NTJD5121NT1G
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 50 eenheden)*
€ 5,10
(excl. BTW)
€ 6,15
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,102 | € 5,10 |
*prijsindicatie
- RS-stocknr.:
- 780-0627
- Fabrikantnummer:
- NTJD5121NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 266mW | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 266mW | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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