Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1

RS-stocknr.:: 165-5872
Fabrikantnummer:: BSD235NH6327XTSA1
Fabrikant:: Infineon

Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1

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RS-stocknr.:: 165-5872
Fabrikantnummer:: BSD235NH6327XTSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	950mA
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-88
	Series	OptiMOS 2
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.32nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	0.8mm
	Length	2mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 950mA
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-88
	Series OptiMOS 2
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.32nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 0.8mm
	Length 2mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 600mΩ Maximum Drain Source Resistance - BSD235NH6327XTSA1

This MOSFET is a compact, surface-mounted N-channel transistor designed for switching and power-management tasks in automotive and industrial environments. It operates as an enhancement-mode device with an isolated transistor configuration and is intended for applications requiring low gate charge switching and thermal endurance at elevated temperatures.

Features and Benefits:

• 20V maximum drain voltage enables safe low-voltage switching
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing

Applications

• Suitable for supply-rail switching in automotive modules
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces

What gate-drive limits should be observed for safe operation?

The device accepts gate-source voltages up to 12V maximum

ensure drive circuits remain within this limit to avoid gate-oxide stress.

How does thermal range affect placement in designs?

It operates between -55 °C and 150 °C, permitting placement near heat‑generating components but still requiring thermal consideration for PCB copper area and airflow to manage 500 mW dissipation.

How many discrete elements are provided on the die?

The chip contains two elements, useful where paired switching channels are needed in a single package.

What physical package constraints influence PCB layout?

The component is supplied in an SC-88 package with six pins, so footprint planning must accommodate the small SMD pin array and clearance for solder fillets.