Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC

RS-stocknr.:: 124-8750
Fabrikantnummer:: IRF7342TRPBF
Fabrikant:: Infineon

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC

Subtotaal (1 rol van 4000 eenheden)*

€ 1.984,00

(excl. BTW)

€ 2.400,00

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 23 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
4000 +	€ 0,496	€ 1.984,00

*prijsindicatie

RS-stocknr.:: 124-8750
Fabrikantnummer:: IRF7342TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Gate Source Voltage Vgs	20V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	4mm
	Height	1.5mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Gate Source Voltage Vgs 20V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 4mm
	Height 1.5mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A

• Drain-source voltage tolerance of up to 55V

• Surface mount design allows for straightforward installations

• Low maximum drain-source resistance improves energy efficiency

• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation

• Automation equipment requiring robust switching capabilities

• Suitable for motor control systems

• Used in power converters for electronics

• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?

The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.