Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF

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Verpakkingsopties
RS-stocknr.:
826-8901
Fabrikantnummer:
IRF7342TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.5mm

Standards/Approvals

No

Length

5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Land van herkomst:
CN

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF


This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits


• Maximum continuous drain current of 3.4A

• Drain-source voltage tolerance of up to 55V

• Surface mount design allows for straightforward installations

• Low maximum drain-source resistance improves energy efficiency

• Gate threshold voltage of 1 V promotes dependable switching

Applications


• Power management circuits for improved energy utilisation

• Automation equipment requiring robust switching capabilities

• Suitable for motor control systems

• Used in power converters for electronics

• Common in battery management systems

What are the thermal limits for operation?


It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?


The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?


Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?


It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?


The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.

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