Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC Infineon IRF7105TRPBF
- RS-stocknr.:
- 165-5912
- Fabrikantnummer:
- IRF7105TRPBF
- Fabrikant:
- Infineon
Prijs Each (On a Reel of 4000)
0,414 €
(excl. BTW)
0,501 €
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 4000 + | 0,414 € | 1.656,00 € |
| *prijsindicatie | ||
- RS-stocknr.:
- 165-5912
- Fabrikantnummer:
- IRF7105TRPBF
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
| Kenmerk | Waarde |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.3 A, 3.5 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 160 mΩ, 400 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 5mm |
| Width | 4mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V, 9.4 nC @ 10 V |
| Transistor Material | Si |
| Height | 1.5mm |
| Series | HEXFET |
| Minimum Operating Temperature | -55 °C |