Infineon OptiMOS N-Channel Power MOSFET, 154 A, 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L019ATMA1
- RS-stocknr.:
- 762-931
- Fabrikantnummer:
- IAUZN04S7L019ATMA1
- Fabrikant:
- Infineon
Ontvang bulkkorting
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€ 1,57
(excl. BTW)
€ 1,90
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 1,57 | - |
| 10 - 99 | € 1,01 | € 5,60 |
| 100 - 499 | € 0,66 | € 91,00 |
| 500 - 999 | € 0,53 | € 520,00 |
| 1000 + | € 0,46 | € 1.110,00 |
*prijsindicatie
- RS-stocknr.:
- 762-931
- Fabrikantnummer:
- IAUZN04S7L019ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 154A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | Tape & Reel | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 950mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 2.29mm | |
| Standards/Approvals | RoHS | |
| Width | 2.29mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 154A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type Tape & Reel | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 950mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 2.29mm | ||
Standards/Approvals RoHS | ||
Width 2.29mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
The Infineon Automotive MOSFET Power-Transistor is an N-channel, enhancement-mode MOSFET designed for automotive applications. It operates in high-temperature conditions and features robust construction. Extended qualification beyond AEC-Q101.
Enhanced electrical testing
Robust design
RoHS compliant
100% Avalanche tested
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