STMicroelectronics SCT019 N channel-Channel Power MOSFET, 90 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT019W120G3-4AG
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 17,57
(excl. BTW)
€ 21,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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- Verzending vanaf 16 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 17,57 |
| 5 + | € 17,04 |
*prijsindicatie
- RS-stocknr.:
- 719-469
- Fabrikantnummer:
- SCT019W120G3-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT019 | |
| Package Type | Hip-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Forward Voltage Vf | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 486W | |
| Maximum Gate Source Voltage Vgs | -10 to 22 V | |
| Maximum Operating Temperature | 200°C | |
| Length | 21.1mm | |
| Width | 15.9 mm | |
| Height | 5.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT019 | ||
Package Type Hip-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Forward Voltage Vf 2.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 486W | ||
Maximum Gate Source Voltage Vgs -10 to 22 V | ||
Maximum Operating Temperature 200°C | ||
Length 21.1mm | ||
Width 15.9 mm | ||
Height 5.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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