STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- RS-stocknr.:
- 214-957
- Fabrikantnummer:
- SCT040W120G3-4
- Fabrikant:
- STMicroelectronics
Subtotaal (1 tube van 30 eenheden)*
€ 494,46
(excl. BTW)
€ 598,29
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending 30 stuk(s) vanaf 18 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 16,482 | € 494,46 |
*prijsindicatie
- RS-stocknr.:
- 214-957
- Fabrikantnummer:
- SCT040W120G3-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -10 to 22 V | |
| Maximum Power Dissipation Pd | 312W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1200V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -10 to 22 V | ||
Maximum Power Dissipation Pd 312W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1200V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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