STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- RS-stocknr.:
- 214-957
- Fabrikantnummer:
- SCT040W120G3-4
- Fabrikant:
- STMicroelectronics
Subtotaal (1 tube van 30 eenheden)*
€ 344,46
(excl. BTW)
€ 416,79
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 30 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 11,482 | € 344,46 |
*prijsindicatie
- RS-stocknr.:
- 214-957
- Fabrikantnummer:
- SCT040W120G3-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1200V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 312W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -10, 22V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, ECOPACK2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1200V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 312W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -10, 22V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, ECOPACK2 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Gerelateerde Links
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin SCT040W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG