STMicroelectronics SCT N-Channel MOSFET, 56 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 17,08
(excl. BTW)
€ 20,67
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 17,08 |
| 10 - 99 | € 16,72 |
| 100 - 599 | € 16,51 |
| 600 + | € 16,31 |
*prijsindicatie
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 388W | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 15.6mm | |
| Length | 34.8mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 388W | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Width 15.6mm | ||
Length 34.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Gerelateerde Links
- STMicroelectronics SCT N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics Sct N-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- STMicroelectronics SCT N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCT N-Channel MOSFET, 40 A, 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- STMicroelectronics SCT N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCT 1 N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4
- STMicroelectronics SCT N-Channel MOSFET, 33 A, 1200 V Depletion, 3-Pin Hip-247 SCTW40N120G2VAG
- STMicroelectronics SCT N-Channel MOSFET, 65 A, 1200 V Depletion, 3-Pin Hip-247 SCT50N120