Fabrikantnummer

STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1.2 kV, 3-Pin Hip-247 SCTWA40N120G2V-4

RS-stocknr.:: 212-2094
Fabrikantnummer:: SCTWA40N120G2V-4
Fabrikant:: STMicroelectronics

STMicroelectronics SCTWA40N120G2V-4 N-Channel MOSFET, 45 A, 1.2 kV, 3-Pin Hip-247 SCTWA40N120G2V-4

Momenteel niet beschikbaar

We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 212-2094
Fabrikantnummer:: SCTWA40N120G2V-4
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	Hip-247
	Series	SCTWA40N120G2V-4
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	70mΩ
	Forward Voltage Vf	3.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	61nC
	Maximum Gate Source Voltage Vgs	22V
	Maximum Power Dissipation Pd	277W
	Maximum Operating Temperature	200°C
	Length	15.9mm
	Height	5.1mm
	Standards/Approvals	No
	Width	21.1mm
	Automotive Standard	No

	Alles selecteren
	Merk STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type Hip-247
	Series SCTWA40N120G2V-4
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 70mΩ
	Forward Voltage Vf 3.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 61nC
	Maximum Gate Source Voltage Vgs 22V
	Maximum Power Dissipation Pd 277W
	Maximum Operating Temperature 200°C
	Length 15.9mm
	Height 5.1mm
	Standards/Approvals No
	Width 21.1mm
	Automotive Standard No

DataSheet - SCTWA40N120G2V-4

SiC MOSFET

The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses

Low power losses at high temperatures

Higher operating temperature (up to 200 ˚C)

Body diode with no recovery losses

Easy to drive

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.