STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- RS-stocknr.:
- 719-466
- Fabrikantnummer:
- SCT018HU65G3AG
- Fabrikant:
- STMicroelectronics
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 18,02 |
| 5 + | € 17,48 |
*prijsindicatie
- RS-stocknr.:
- 719-466
- Fabrikantnummer:
- SCT018HU65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HU3PAK | |
| Series | Sct | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Maximum Power Dissipation Pd | 388W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.6mm | |
| Length | 19mm | |
| Width | 14.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HU3PAK | ||
Series Sct | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Maximum Power Dissipation Pd 388W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Height 3.6mm | ||
Length 19mm | ||
Width 14.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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