STMicroelectronics SCT N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin Hip-247-4 SCT040W65G3-4
- RS-stocknr.:
- 366-221
- Fabrikantnummer:
- SCT040W65G3-4
- Fabrikant:
- STMicroelectronics
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€ 9,76
(excl. BTW)
€ 11,81
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 26 stuk(s) vanaf 03 november 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 9,76 |
| 10 - 99 | € 8,78 |
| 100 + | € 8,14 |
*prijsindicatie
- RS-stocknr.:
- 366-221
- Fabrikantnummer:
- SCT040W65G3-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Operating Frequency | 1MHz | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 240W | |
| Package Type | Hip-247-4 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Width | 15.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Operating Frequency 1MHz | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 240W | ||
Package Type Hip-247-4 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS | ||
Height 5.1mm | ||
Length 20.1mm | ||
Width 15.9mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
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