STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
- RS-stocknr.:
- 214-955
- Fabrikantnummer:
- SCT027H65G3AG
- Fabrikant:
- STMicroelectronics
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€ 12,25
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€ 14,82
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,25 |
| 10 - 99 | € 11,33 |
| 100 - 999 | € 11,20 |
| 1000 + | € 11,06 |
*prijsindicatie
- RS-stocknr.:
- 214-955
- Fabrikantnummer:
- SCT027H65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 48.6nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 2.9V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 10.4mm | |
| Height | 4.8mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 48.6nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 2.9V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 10.4mm | ||
Height 4.8mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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