STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG
- RS-stocknr.:
- 215-220
- Fabrikantnummer:
- SCT012H90G3AG
- Fabrikant:
- STMicroelectronics
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€ 52,03
(excl. BTW)
€ 62,96
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 52,03 |
| 10 + | € 46,84 |
*prijsindicatie
- RS-stocknr.:
- 215-220
- Fabrikantnummer:
- SCT012H90G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | SCT | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 138nC | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series SCT | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 138nC | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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