STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7

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RS-stocknr.:
719-465
Fabrikantnummer:
SCT018H65G3-7
Fabrikant:
STMicroelectronics
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STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Series

Sct

Package Type

H2PAK-7

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

79.4nC

Forward Voltage Vf

2.6V

Maximum Power Dissipation Pd

385W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

15.25mm

Width

10.4 mm

Height

4.8mm

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very fast and robust intrinsic body diode

Very low RDS(on) over the entire temperature range

High speed switching performances

Source sensing pin for increased efficiency

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