Vishay SQS174ELNW Type N-Channel Single MOSFETs, 87 A, 72 V Enhancement, 8-Pin PowerPAK SQS174ELNW-T1_GE3
- RS-stocknr.:
- 653-126
- Fabrikantnummer:
- SQS174ELNW-T1_GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 2.004,00
(excl. BTW)
€ 2.424,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,668 | € 2.004,00 |
*prijsindicatie
- RS-stocknr.:
- 653-126
- Fabrikantnummer:
- SQS174ELNW-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 72V | |
| Package Type | PowerPAK | |
| Series | SQS174ELNW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 103W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 3.3 mm | |
| Height | 0.75mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 72V | ||
Package Type PowerPAK | ||
Series SQS174ELNW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 103W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals AEC-Q101 | ||
Width 3.3 mm | ||
Height 0.75mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive-grade N-channel MOSFET designed for high-efficiency switching in compact, thermally demanding environments. It supports up to 72 V drain-source voltage and handles continuous drain currents up to 87 A at 175 °C, making it suitable for robust automotive power systems. Packaged in PowerPAK 1212-8SLW, it features TrenchFET Gen IV technology for ultra-low RDS(on) and optimized thermal performance.
AEC Q101 qualified
Pb Free
Halogen free
Wettable flank terminals
RoHS compliant
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