Vishay SQJQ140ER Type N-Channel Single MOSFETs, 413 A, 40 V Enhancement, 4-Pin PowerPAK SQJQ140ER-T1_GE3
- RS-stocknr.:
- 653-124
- Fabrikantnummer:
- SQJQ140ER-T1_GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 2000 eenheden)*
€ 5.120,00
(excl. BTW)
€ 6.200,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 2,56 | € 5.120,00 |
*prijsindicatie
- RS-stocknr.:
- 653-124
- Fabrikantnummer:
- SQJQ140ER-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 413A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJQ140ER | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00065Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 288nC | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.42mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.6mm | |
| Width | 8 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 413A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJQ140ER | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00065Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 288nC | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.42mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1.6mm | ||
Width 8 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The Vishay automotive-grade N-channel MOSFET engineered for high-efficiency switching in compact, power-dense systems. It supports up to 40 V drain-source voltage and delivers exceptional current handling with up to 413 A at 175 °C. Housed in a thin PowerPAK 8x8LR package, it leverages TrenchFET Gen IV technology for ultra-low RDS(on) and superior thermal performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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