Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 118 A, 1200 V N, 4-Pin Tape & Reel DM170S12TDRB
- RS-stocknr.:
- 427-760
- Fabrikantnummer:
- DM170S12TDRB
- Fabrikant:
- Starpower
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 20,34
(excl. BTW)
€ 24,61
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 13 stuk(s) vanaf 01 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 20,34 |
| 10 - 99 | € 18,30 |
| 100 + | € 16,88 |
*prijsindicatie
- RS-stocknr.:
- 427-760
- Fabrikantnummer:
- DM170S12TDRB
- Fabrikant:
- Starpower
Specificaties
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | SiC Mosfet without Diode | |
| Channel Type | Single Switch | |
| Maximum Continuous Drain Current Id | 118A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 29.0mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 355W | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type SiC Mosfet without Diode | ||
Channel Type Single Switch | ||
Maximum Continuous Drain Current Id 118A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 29.0mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 355W | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Chip sintering technology
Low inductance case avoid oscillations
ROHS
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