Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS-stocknr.:
- 805-1753
- Fabrikantnummer:
- NGB8207ABNT4G
- Fabrikant:
- Littelfuse
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,10
(excl. BTW)
€ 12,20
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 225 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 2,02 | € 10,10 |
*prijsindicatie
- RS-stocknr.:
- 805-1753
- Fabrikantnummer:
- NGB8207ABNT4G
- Fabrikant:
- Littelfuse
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Littelfuse | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 365 V | |
| Maximum Gate Emitter Voltage | ±15V | |
| Maximum Power Dissipation | 165 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.29 x 9.65 x 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Littelfuse | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 365 V | ||
Maximum Gate Emitter Voltage ±15V | ||
Maximum Power Dissipation 165 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.29 x 9.65 x 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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