STMicroelectronics STGB10NC60HDT4, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 795-7041
- Fabrikantnummer:
- STGB10NC60HDT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,44
(excl. BTW)
€ 12,63
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 120 stuk(s) klaar voor verzending
- 410 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,088 | € 10,44 |
| 25 - 45 | € 1,984 | € 9,92 |
| 50 - 120 | € 1,788 | € 8,94 |
| 125 - 245 | € 1,604 | € 8,02 |
| 250 + | € 1,526 | € 7,63 |
*prijsindicatie
- RS-stocknr.:
- 795-7041
- Fabrikantnummer:
- STGB10NC60HDT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35 mm | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Width 9.35 mm | ||
Height 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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