Littelfuse, Type N-Channel IGBT, 20 A 365 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 171-0128
- Fabrikantnummer:
- NGB8207ABNT4G
- Fabrikant:
- Littelfuse
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 171-0128
- Fabrikantnummer:
- NGB8207ABNT4G
- Fabrikant:
- Littelfuse
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Littelfuse | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 365V | |
| Maximum Power Dissipation Pd | 165W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 6μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | 15 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.29mm | |
| Width | 15.88 mm | |
| Standards/Approvals | RoHS | |
| Series | Ignition IGBT | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Energy Rating | 500mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Littelfuse | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 365V | ||
Maximum Power Dissipation Pd 165W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 6μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO 15 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.29mm | ||
Width 15.88 mm | ||
Standards/Approvals RoHS | ||
Series Ignition IGBT | ||
Height 4.83mm | ||
Automotive Standard No | ||
Energy Rating 500mJ | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- Littelfuse NGB8207ABNT4G IGBT, 50 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)
- STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild FGB3440G2_F085 IGBT, 26.9 A 400 V, 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild ISL9V5045S3ST_F085 IGBT, 51 A 505 V, 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild ISL9V3040S3ST IGBT, 21 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount
- Fairchild FGB3245G2_F085 IGBT, 23 A 450 V, 3-Pin D2PAK (TO-263), Surface Mount