STMicroelectronics STGB30H65DFB2, N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 204-9868
- Fabrikantnummer:
- STGB30H65DFB2
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 50 meer toe om € 13,60 te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 13,44
(excl. BTW)
€ 16,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 5 - 45 | € 2,688 | € 13,44 | - |
| 50 - 120 | € 2,416 | € 12,08 | € 13,60 |
| 125 + | € 1,98 | € 9,90 | € 88,50 |
*prijsindicatie
- RS-stocknr.:
- 204-9868
- Fabrikantnummer:
- STGB30H65DFB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.35mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Series | Trench Gate Field Stop | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Width 9.35mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.6mm | ||
Series Trench Gate Field Stop | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Gerelateerde Links
- STMicroelectronics STGB30H65DFB2, N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- Infineon IGB50N65H5ATMA1, N-Channel IGBT, 50 A 650 V, 3-Pin TO-263, Surface
- STMicroelectronics, N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA30H65DFB2, N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA30HP65FB2, N-Channel IGBT, 50 A 650 V, 3-Pin TO-247 LL, Through Hole
- onsemi AFGB40T65SQDN, N-Channel IGBT, 80 A 650 V, 3-Pin TO-263, Surface
- Infineon IGB50N65S5ATMA1, N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-263, Surface
- Infineon IGB20N65S5ATMA1, N-Channel IGBT, 40 A 650 V, 3-Pin TO-263, Through Hole