Infineon FS950R08A6P2BBPSA1 IGBT Module, 950 A 750 V HybridPACK

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€ 613,31

(excl. BTW)

€ 742,11

(incl. BTW)

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Verpakkingsopties
RS-stocknr.:
244-5879
Fabrikantnummer:
FS950R08A6P2BBPSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

950 A

Maximum Collector Emitter Voltage

750 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

6

Maximum Power Dissipation

870 W

Package Type

HybridPACK

The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.

Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame

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