Infineon FF750R17ME7DB11BPSA1 IGBT Module, 750 A 1700 V
- RS-stocknr.:
- 250-0224
- Fabrikantnummer:
- FF750R17ME7DB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 10 eenheden)*
€ 2.469,36
(excl. BTW)
€ 2.987,93
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 10 + | € 246,936 | € 2.469,36 |
*prijsindicatie
- RS-stocknr.:
- 250-0224
- Fabrikantnummer:
- FF750R17ME7DB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 750 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 750 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
The Infineon EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology.
Integrated temperature sensor
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing
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