Infineon FF750R17ME7DB11BPSA1 IGBT Module, 750 A 1700 V
- RS-stocknr.:
- 250-0225
- Fabrikantnummer:
- FF750R17ME7DB11BPSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 256,77
(excl. BTW)
€ 310,69
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 7 stuk(s) vanaf 22 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 256,77 |
| 2 - 2 | € 243,92 |
| 3 + | € 233,66 |
*prijsindicatie
- RS-stocknr.:
- 250-0225
- Fabrikantnummer:
- FF750R17ME7DB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 750 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 20 mW | |
| Number of Transistors | 2 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 750 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 20 mW | ||
Number of Transistors 2 | ||
The Infineon EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology.
Integrated temperature sensor
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing
High current density
Low VCE, sat
Overload operation up to 175°C
TRENCHSTOPTM IGBT7
VCE, sat with positive temperature coefficient
Enlarged diode for regenerative operation
High power density
Isolated base plate
PressFIT contact technology
Standard housing
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