Infineon IGBT Module 750 V HybridPACK
- RS-stocknr.:
- 244-5877
- Fabrikantnummer:
- FS950R08A6P2BBPSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 6 eenheden)*
€ 2.943,912
(excl. BTW)
€ 3.562,134
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 6 + | € 490,652 | € 2.943,91 |
*prijsindicatie
- RS-stocknr.:
- 244-5877
- Fabrikantnummer:
- FS950R08A6P2BBPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 870W | |
| Package Type | HybridPACK | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC24720 and IEC16022 | |
| Series | FS950R08A6P2BBPSA1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 870W | ||
Package Type HybridPACK | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC24720 and IEC16022 | ||
Series FS950R08A6P2BBPSA1 | ||
Automotive Standard No | ||
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
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