Infineon FP25R12W2T4B11BOMA1 IGBT Module 1.2 kV

RS-stocknr.:: 244-5391
Fabrikantnummer:: FP25R12W2T4B11BOMA1
Fabrikant:: Infineon

Infineon FP25R12W2T4B11BOMA1 IGBT Module 1.2 kV

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€ 47,65

(excl. BTW)

€ 57,66

(incl. BTW)

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Plus verzending 5 stuk(s) vanaf 12 oktober 2026

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1 - 1	€ 47,65
2 - 4	€ 46,70
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RS-stocknr.:: 244-5391
Fabrikantnummer:: FP25R12W2T4B11BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Maximum Power Dissipation Pd	175W
	Number of Transistors	7
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Width	42.5mm
	Standards/Approvals	RoHS
	Length	51mm
	Series	FP25R12W2T4B11B
	Height	12mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Maximum Power Dissipation Pd 175W
	Number of Transistors 7
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Width 42.5mm
	Standards/Approvals RoHS
	Length 51mm
	Series FP25R12W2T4B11B
	Height 12mm
	Automotive Standard No

Datasheet - FP25R12W2T4B11BOMA1

Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1

This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.

Features and Benefits:

• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels

Applications

• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry

What ambient range can it withstand?

It is specified to function down to −40°C and up to 150°C.

How does the gate-emitter limit affect driver selection?

Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.

What electrical characteristic reduces energy loss during conduction?

The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.

How many switching elements are integrated in the package?

The module contains seven discrete transistors within a single enclosure.

Is the product suitable for environmentally restricted manufacturing?

It meets RoHS requirements and is therefore compliant with lead-free process constraints.