Infineon FP75R12KT4B11BOSA1 IGBT Module, 75 A 1200 V
- RS-stocknr.:
- 244-5846
- Fabrikantnummer:
- FP75R12KT4B11BOSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 244-5846
- Fabrikantnummer:
- FP75R12KT4B11BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 385 W | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 385 W | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.
Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
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