Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 218-4398
Fabrikantnummer:: IHW30N160R5XKSA1
Fabrikant:: Infineon

Infineon IHW30N160R5XKSA1, N-Channel IGBT, 30 A 1600 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 82,80

(excl. BTW)

€ 100,20

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 90,00

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Plus verzending 1.650 stuk(s) vanaf 12 oktober 2026
Plus verzending 240 stuk(s) vanaf 22 oktober 2026

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Aantal stuks	Per stuk	Per tube*
30 - 30	€ 2,76	€ 82,80
60 - 120	€ 2,622	€ 78,66
150 +	€ 2,512	€ 75,36

*prijsindicatie

RS-stocknr.:: 218-4398
Fabrikantnummer:: IHW30N160R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current Ic	30A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1600V
	Number of Transistors	1
	Maximum Power Dissipation Pd	263W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Length	21.5mm
	Height	5.3mm
	Width	16.3mm
	Standards/Approvals	JEDEC47/20/22
	Series	IHW30N160R5
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current Ic 30A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1600V
	Number of Transistors 1
	Maximum Power Dissipation Pd 263W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Length 21.5mm
	Height 5.3mm
	Width 16.3mm
	Standards/Approvals JEDEC47/20/22
	Series IHW30N160R5
	Automotive Standard No

IHW30N160R5XKSA1 Datasheet

Infineon IHW30N160R5 Series IGBT, 1600V Collector-Emitter Voltage, 30A Collector Current - IHW30N160R5XKSA1

This IGBT is a high-voltage, through‑hole transistor designed for power switching in demanding industrial environments. It operates as an N‑channel device in a TO‑247 package and is intended for applications requiring substantial current handling and elevated temperature tolerance.

Features and Benefits:

• Handles continuous collector current of 30 A for sustained loads
• Withstands collector-emitter voltage of 1600 V for high‑voltage systems
• Power dissipation rating of 263 W supports heavy switching duty
• Low collector-emitter saturation voltage of 1.85 V reduces conduction losses
• Gate-emitter voltage tolerance of ±20-25 V permits robust gate‑drive margins
• Qualified to JEDEC 47/20/22 for standardised thermal and mechanical resilience

Applications

• Suitable for industrial high‑voltage inverter stages
• Used for medium‑power traction and motor‑drive modules
• Ideal for high‑voltage DC-DC conversion circuits
• Can be used for power supplies in industrial automation
• Used with thermal‑management systems operating at elevated temperatures

What operating temperature range can it tolerate?

It functions across −40 °C to 175 °C, enabling use in wide thermal environments.

How many transistor elements are contained within the device?

The package contains a single transistor element for discrete switching.

What mounting method and package type does it use?

It is supplied for through‑hole mounting in a TO‑247 package.

Are there any approvals for mechanical and thermal testing?

It meets JEDEC 47/20/22 standards covering thermal cycling and related tests.