Infineon FF1600R12IP7BOSA1 Half Bridge IGBT, 1.6 kA 1200 V, Screw Mount
- RS-stocknr.:
- 349-361
- Fabrikantnummer:
- FF1600R12IP7BOSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 875,94
(excl. BTW)
€ 1.059,89
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 875,94 |
*prijsindicatie
- RS-stocknr.:
- 349-361
- Fabrikantnummer:
- FF1600R12IP7BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 1.6 kA | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation | 20 mW | |
| Configuration | Half Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 1.6 kA | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 20 mW | ||
Configuration Half Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
- Land van herkomst:
- DE
The Infineon PrimePACK 2 1200 V 1600 A Dual IGBT Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode is designed for high power applications, offering exceptional performance in a compact and robust package. It delivers the highest power density, optimizing space while maintaining outstanding power handling capabilities. The module features best-in-class VCEsat, ensuring low saturation voltage for higher efficiency and reduced energy losses.
Increase in power density
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
Less cooling effort for same output power
Higher inverter output current
Avoidance of paralleling of IGBT modules
Standardized housing
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