Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

RS-stocknr.:: 218-4399
Fabrikantnummer:: IHW30N160R5XKSA1
Fabrikant:: Infineon

Infineon IHW30N160R5XKSA1 IGBT, 30 A 1600 V, 3-Pin TO-247

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Subtotaal (1 verpakking van 5 eenheden)*

€ 23,30

(excl. BTW)

€ 28,20

(incl. BTW)

GRATIS bezorging voor bestellingen vanaf € 75,00

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Aantal stuks	Per stuk	Per verpakking*
5 - 5	€ 4,66	€ 23,30
10 - 20	€ 4,194	€ 20,97
25 - 45	€ 3,914	€ 19,57
50 - 120	€ 3,634	€ 18,17
125 +	€ 3,402	€ 17,01

*prijsindicatie

RS-stocknr.:: 218-4399
Fabrikantnummer:: IHW30N160R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current	30 A
	Maximum Collector Emitter Voltage	1600 V
	Maximum Gate Emitter Voltage	20V
	Number of Transistors	1
	Maximum Power Dissipation	263 W
	Package Type	TO-247
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	16.3 x 21.5 x 5.3mm
	Minimum Operating Temperature	-40 °C
	Gate Capacitance	1500pF
	Maximum Operating Temperature	+175 °C

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current 30 A
	Maximum Collector Emitter Voltage 1600 V
	Maximum Gate Emitter Voltage 20V
	Number of Transistors 1
	Maximum Power Dissipation 263 W
	Package Type TO-247
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 16.3 x 21.5 x 5.3mm
	Minimum Operating Temperature -40 °C
	Gate Capacitance 1500pF
	Maximum Operating Temperature +175 °C

Infineon IGBT, 30A Maximum Continuous Collector Current, 1600V Maximum Collector Emitter Voltage - IHW30N160R5XKSA1

This IGBT is a robust semiconductor device designed for high voltage applications, featuring a maximum collector current of 30A and operating within a temperature range of -40°C to +175°C. The TO-247 package ensures convenient installation, while its dimensions of 16.3 x 21.5 x 5.3 mm provide a compact solution for various electronic needs.

Features & Benefits

• Reverse-conducting capability for enhanced performance
• Monolithic body diode reduces forward voltage loss
• Tight parameter distribution enhances reliability
• High ruggedness improves durability in demanding conditions
• Low EMI emissions ensure minimal interference in circuits

Applications

• Used for induction cooking
• Suitable for microwave oven circuitry
• Ideal for various high voltage switching
• Compatible with specialised semiconductor power modules

What are the key thermal characteristics of this device?

The thermal resistance from junction to ambient is 40 K/W, and the junction to case thermal resistance is 0.57 K/W, ensuring efficient heat management under load conditions.

How does this IGBT module handle high voltage applications?

It boasts a collector-emitter voltage rating of up to 1600V, making it suitable for high voltage environments while maintaining safe operation across specified limits.

What implications does the maximum power dissipation have for design?

With a maximum power dissipation of 263W, it allows for efficient energy management, ensuring that the device can operate effectively without thermal overload in typical applications.