Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 218-4395
Fabrikantnummer:: IHW30N135R5XKSA1
Fabrikant:: Infineon

Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

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Subtotaal (1 tube van 30 eenheden)*

€ 74,88

(excl. BTW)

€ 90,60

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tube*
30 - 30	€ 2,496	€ 74,88
60 - 120	€ 2,371	€ 71,13
150 - 270	€ 2,271	€ 68,13
300 - 570	€ 2,172	€ 65,16
600 +	€ 2,022	€ 60,66

*prijsindicatie

RS-stocknr.:: 218-4395
Fabrikantnummer:: IHW30N135R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	30A
	Maximum Collector Emitter Voltage Vceo	1350V
	Number of Transistors	1
	Maximum Power Dissipation Pd	330W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 ±25 V
	Maximum Operating Temperature	175°C
	Length	21.1mm
	Standards/Approvals	JESD-022
	Width	16.13mm
	Series	IHW30N135R5
	Height	5.21mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 30A
	Maximum Collector Emitter Voltage Vceo 1350V
	Number of Transistors 1
	Maximum Power Dissipation Pd 330W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 ±25 V
	Maximum Operating Temperature 175°C
	Length 21.1mm
	Standards/Approvals JESD-022
	Width 16.13mm
	Series IHW30N135R5
	Height 5.21mm
	Automotive Standard No

Datasheet - IHW30N135R5XKSA1

Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1

This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.

Features and Benefits:

• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments

Applications

• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits

What is the device’s package and mounting style?

It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.

How does the device behave thermally under continuous operation?

It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.

What gate drive limits must be observed?

The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.

What switching or conduction capability is provided for load design?

The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.

Are there recognised standards associated with the device?

It conforms to JESD-022 moisture sensitivity classification for handling and storage.