Infineon IHW30N135R5XKSA1, N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole

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Verpakkingsopties
RS-stocknr.:
218-4397
Fabrikantnummer:
IHW30N135R5XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1350V

Maximum Power Dissipation Pd

330W

Number of Transistors

1

Package Type

TO-247

Mount Type

Through Hole

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Maximum Gate Emitter Voltage VGEO

±20 ±25 V

Maximum Operating Temperature

175°C

Length

21.1mm

Width

16.13mm

Series

IHW30N135R5

Standards/Approvals

JESD-022

Height

5.21mm

Automotive Standard

No

Infineon IHW30N135R5 Series IGBT, 330W Maximum Power Dissipation, 30A Max Continuous Collector Current - IHW30N135R5XKSA1


This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It is supplied in a TO-247 through-hole package with three pins and is intended for applications requiring elevated voltage handling and substantial current conduction while operating across a wide temperature range.

Features and Benefits:


• 1350 V rating enables operation in high-voltage systems
• 30 A continuous current supports heavy load driving
• 330 W power dissipation allows sustained power handling
• 1.65 V VCE(sat) yields reduced conduction losses under load
• ±20 V gate-emitter tolerance permits robust gate drive swings
• −40 °C to 175 °C temperature range maintains performance in harsh environments

Applications


• Suitable for high-voltage motor drive stages
• Ideal for industrial inverter and converter designs
• Used with power supplies requiring through-hole mounting
• Can be used for traction and utility power electronics
• Appropriate for fast-switching high-voltage circuits

What is the device’s package and mounting style?


It is supplied in a TO-247 package and designed for through-hole mounting on power assemblies.

How does the device behave thermally under continuous operation?


It can dissipate up to 330 W and is specified for operation up to 175 °C case or junction temperatures.

What gate drive limits must be observed?


The gate-emitter rating is ±20 V, so drive circuits should remain within that voltage range.

What switching or conduction capability is provided for load design?


The device supports continuous collector currents up to 30 A with a maximum collector-emitter saturation of 1.65 V.

Are there recognised standards associated with the device?


It conforms to JESD-022 moisture sensitivity classification for handling and storage.

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