Infineon IHW30N135R5XKSA1, Type N-Channel IGBT, 30 A 1350 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 218-4397
- Fabrikantnummer:
- IHW30N135R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 16,80
(excl. BTW)
€ 20,35
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 175 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,36 | € 16,80 |
| 25 - 45 | € 2,856 | € 14,28 |
| 50 - 120 | € 2,688 | € 13,44 |
| 125 - 245 | € 2,486 | € 12,43 |
| 250 + | € 2,318 | € 11,59 |
*prijsindicatie
- RS-stocknr.:
- 218-4397
- Fabrikantnummer:
- IHW30N135R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 330W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022 | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Series | IHW30N135R5 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 330W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022 | ||
Height 5.21mm | ||
Length 21.1mm | ||
Series IHW30N135R5 | ||
Automotive Standard No | ||
The Infineon IHW series reverse conducting IGBT with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. It has collector emitter voltage of 1350 V and 30 A of collector current.
Increased switching frequency
Lowest power dissipation
Better thermal management for higher reliability
Lower EMI filtering requirements
Reduced system costs
Highest reliability against peak current
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