Infineon IHW40N135R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 215-6643
Fabrikantnummer:: IHW40N135R5XKSA1
Fabrikant:: Infineon

Infineon IHW40N135R5XKSA1, Type N-Channel Reverse Conducting IGBT, 80 A 1350 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:: 215-6643
Fabrikantnummer:: IHW40N135R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	Reverse Conducting IGBT
	Maximum Collector Emitter Voltage Vceo	1350V
	Maximum Power Dissipation Pd	394W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.65V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±25 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JESD-022, RoHS
	Series	Resonant Switching
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type Reverse Conducting IGBT
	Maximum Collector Emitter Voltage Vceo 1350V
	Maximum Power Dissipation Pd 394W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.65V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±25 V
	Maximum Operating Temperature 175°C
	Standards/Approvals JESD-022, RoHS
	Series Resonant Switching
	Automotive Standard No

Datasheet-IHW40N135R5XKSA1

Infineon Resonant Switching Series Reverse Conducting IGBT, 1350V Max Collector Emitter Voltage, 80A Max Continuous Collector Current - IHW40N135R5XKSA1

This reverse-conducting IGBT is a high-voltage switching device designed for resonant converter topologies and power-electronics applications. It combines insulated-gate control with an integrated reverse-conduction path to simplify circuit design in high-voltage systems while operating across a wide ambient temperature range.

Features and Benefits:

• 1350V collector-emitter rating enables high-voltage switching capability
• 80A continuous collector current supports substantial load currents
• 1.65V typical Vce(sat) reduces conduction losses at high currents
• ±25V gate-emitter tolerance allows robust gate-drive margins
• 394W maximum power dissipation manages elevated thermal stress
• TO-247 through-hole package simplifies heatsinking and assembly

Applications

• Suitable for resonant converters in industrial power supplies
• Ideal for high-voltage inverters and switch-mode supplies
• Used with medium-power motor drives requiring reverse conduction
• Can be used for switch networks in renewable-energy systems
• Suitable for laboratory and bench prototyping with through-hole mounting

What temperature extremes can be expected during operation?

The device is specified to function from -40 °C up to 175 °C junction temperature, accommodating high-temperature switching environments.

How does the device simplify gate-drive design?

The gate-emitter rating of ±25V provides a wide allowable gate-voltage range, reducing sensitivity to drive transients and enabling flexible drive circuitry.

What package considerations affect thermal management?

Housed in a TO-247 through‑hole package, it allows direct attachment to external heatsinks and straightforward thermal interfacing for effective power dissipation.

Which regulatory or environmental standards apply to this component?

It conforms to RoHS and JESD-022 handling standards relevant to moisture sensitivity and hazardous-substance restrictions.