Infineon IHW30N65R6XKSA1, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 225-0572
- Fabrikantnummer:
- IHW30N65R6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,02
(excl. BTW)
€ 15,755
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Op voorraad
- Plus verzending 135 stuk(s) vanaf 30 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,604 | € 13,02 |
| 25 - 45 | € 2,342 | € 11,71 |
| 50 - 120 | € 2,184 | € 10,92 |
| 125 - 245 | € 2,028 | € 10,14 |
| 250 + | € 1,90 | € 9,50 |
*prijsindicatie
- RS-stocknr.:
- 225-0572
- Fabrikantnummer:
- IHW30N65R6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 65A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 160W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 41.9mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | IHW30N65R6 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 65A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 160W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 41.9mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Series IHW30N65R6 | ||
Automotive Standard No | ||
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage
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